AON7407 v ds i d (at v gs =-4.5v) -40a r ds(on) (at v gs =-4.5v) < 9.5m w r ds(on) (at v gs =-2.5v) < 12.5m w r ds(on) (at v gs =-1.8v) < 18m w symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 3.5 75 4.2 power dissipation b p d w power dissipation a p dsm w t a =70c 29 2 t a =25c a t a =25c i dsm a t a =70c i d -40 -29 t c =25c t c =100c avalanche energy l=0.1mh c mj avalanche current c -11.5 continuous drain current 80 -14.5 a -40 the AON7407 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted - 20v v 8 gate-source voltage drain-source voltage -20 units maximum junction-to-ambient a c/w r q ja 30 60 40 junction and storage temperature range -55 to 150 c thermal characteristics -100 pulsed drain current c continuous drain current g parameter typ max t c =25c 3.1 12 t c =100c top view 1 2 3 4 8 7 6 5 g d s www.freescale.net.cn 1/6 20v p-channel mosfet general description features
symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.3 -0.55 -0.9 v i d(on) -100 a 7.6 9.5 t j =125c 10.5 13.5 9.3 12.5 m w 11.4 18 m w g fs 72 s v sd -0.52 -1 v i s -35 a c iss 2795 3495 4195 pf c oss 365 528 690 pf c rss 255 425 595 pf r g 2.8 5.6 w q g 35 44 53 nc q gs 9 nc q gd 11 nc t d(on) 18 ns t r 32 ns t d(off) 136 ns t f 59 ns t rr 26 33 40 ns q rr 80 100 120 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-14a reverse transfer capacitance i f =-14a, di/dt=500a/ m s v gs =0v, v ds =-10v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs , i d =-250 m a v ds =0v, v gs = 8v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =-1a,v gs =0v v ds =-5v, i d =-14a v gs =-1.8v, i d =-11a v gs =-2.5v, i d =-13a v gs =-4.5v, v ds =-10v, r l =0.75 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-4.5v, v ds =-10v, i d =-14a gate source charge gate drain charge body diode reverse recovery charge i f =-14a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is use d. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. www.freescale.net.cn 2/6 AON7407 20v p-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 20 40 60 0 0.5 1 1.5 2 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 4 6 8 10 12 14 0 5 10 15 20 25 30 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-1.8v i d =-11a v gs =-4.5v i d =-14a v gs =-2.5v i d =-13a 0 5 10 15 20 25 0 2 4 6 8 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =-5v v gs =-1.8v v gs =-4.5v i d =-14a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-1v -4.5v -2.5v -3v -1.5v -1.8v -8v v gs =-2.5v www.freescale.net.cn 3/6 AON7407 20v p-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 1 2 3 4 5 0 10 20 30 40 50 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to-case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q jc normalized transient thermal resistance c oss c rss v ds =-10v i d =-14a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s r q jc =4.2c/w www.freescale.net.cn 4/6 AON7407 20v p-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 10 20 30 40 50 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) -current rating i d (a) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to-ambient (note h) power (w) t a =25 c r q ja =75c/w 10 100 1000 1 10 100 1000 time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) -i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c www.freescale.net.cn 5/6 AON7407 20v p-channel mosfet
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & w aveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & w aveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) www.freescale.net.cn 6/6 AON7407 20v p-channel mosfet
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